? semiconductor components industries, llc, 2004 june, 2004 ? rev. 2 1 publication order number: 2n3906/d 2n3906 preferred device general purpose transistors pnp silicon features ? pb?free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cbo 40 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous i c 200 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total power dissipation @ t a = 60 c p d 250 mw total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics (note 1) characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w 1. indicates data in addition to jedec requirements. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. preferred devices are recommended choices for future use and best overall value. collector 3 2 base 1 emitter to?92 case 29 style 1 3 2 1 y = year ww = work week marking diagrams 2n 3906 yww http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
2n3906 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 2) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 40 ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i bl ? 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex ? 50 nadc on characteristics (note 2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 60 80 100 60 30 ? ? 300 ? ? ? collector ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc v ce(sat) ? ? 0.25 0.4 vdc base ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 ? 0.85 0.95 vdc small?signal characteristics current ?gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 250 ? mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 4.5 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 10 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 2.0 12 k voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 10 x 10 ?4 small?signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 100 400 ? output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 3.0 60 mhos noise figure (i c = 100 adc, v ce = 5.0 vdc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = 0.5 vdc, t d ? 35 ns rise time (v cc 3 . 0 vdc , v be 0 . 5 vdc , i c = 10 madc, i b1 = 1.0 madc) t r ? 35 ns storage time (v cc = 3.0 vdc, i c = 10 madc, i b1 = i b2 = 1.0 madc) t s ? 225 ns fall time (v cc = 3.0 vdc, i c = 10 madc, i b1 = i b2 = 1.0 madc) t f ? 75 ns 2. pulse test: pulse width 300 s; duty cycle 2%. ordering information device package shipping 2 2n3906 to?92 5,000 units / box 2n3906g to?92 (pb?free) 5,000 units / box 2n3906rl1 to?92 5,000 units / box 2N3906RLRA to?92 2,000 / tape & reel 2N3906RLRAg to?92 (pb?free) 2,000 / tape & reel 2n3906rlrm to?92 2,000 / ammo pack 2n3906rlrmg to?92 (pb?free) 2,000 / ammo pack 2n3906rlrp to?92 2,000 / tape & reel 2n3906zl1 to?92 2,000 / ammo pack 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
2n3906 http://onsemi.com 3 figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 5. turn ?on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 6. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v
2n3906 http://onsemi.com 4 typical audio small? signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 7. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 8. r g , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a h parameters (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) figure 9. current gain i c , collector current (ma) 70 100 200 300 50 figure 10. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0
2n3906 http://onsemi.com 5 typical static characteristics figure 13. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 15. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 16. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/ c) v
2n3906 http://onsemi.com 6 package dimensions to?92 to?226aa case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector style 14: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n3906/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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